Photovoltaic property of domain engineered epitaxial BiFeO3 films

Yang Zhou; Liang Fang; Lu You; Peng Ren; Le Wang; Junling Wang

doi:10.1063/1.4905000

Photovoltaic property of domain engineered epitaxial BiFeO₃ films

Yang Zhou, Liang Fang^*, Lu You, Peng Ren, Le Wang, Junling Wang

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

34 Citations (Scopus)

Abstract

The effect of domain structure on the photovoltaic response of BiFeO₃ vertical capacitors is investigated, by domain engineering using vicinal SrTiO₃ substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO₃ interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO₃ thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. © 2014 AIP Publishing LLC.

Original language	English
Article number	252903
Journal	Applied Physics Letters
Volume	105
Issue number	25
DOIs	https://doi.org/10.1063/1.4905000
Publication status	Published - 22 Dec 2014
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{2a144e2071994d22802ee5dd948bb3d9,

title = "Photovoltaic property of domain engineered epitaxial BiFeO3 films",

abstract = "The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. {\textcopyright} 2014 AIP Publishing LLC.",

author = "Yang Zhou and Liang Fang and Lu You and Peng Ren and Le Wang and Junling Wang",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2014",

month = dec,

day = "22",

doi = "10.1063/1.4905000",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Photovoltaic property of domain engineered epitaxial BiFeO3 films

AU - Zhou, Yang

AU - Fang, Liang

AU - You, Lu

AU - Ren, Peng

AU - Wang, Le

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2014/12/22

Y1 - 2014/12/22

N2 - The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. © 2014 AIP Publishing LLC.

AB - The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. © 2014 AIP Publishing LLC.

UR - http://www.scopus.com/inward/record.url?scp=84920097024&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84920097024&origin=recordpage

U2 - 10.1063/1.4905000

DO - 10.1063/1.4905000

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252903

ER -