Photovoltaic property of domain engineered epitaxial BiFeO3 films

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

33 Scopus Citations
View graph of relations

Author(s)

  • Yang Zhou
  • Liang Fang
  • Lu You
  • Peng Ren
  • Le Wang

Detail(s)

Original languageEnglish
Article number252903
Journal / PublicationApplied Physics Letters
Volume105
Issue number25
Publication statusPublished - 22 Dec 2014
Externally publishedYes

Abstract

The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. © 2014 AIP Publishing LLC.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

Photovoltaic property of domain engineered epitaxial BiFeO3 films. / Zhou, Yang; Fang, Liang; You, Lu et al.
In: Applied Physics Letters, Vol. 105, No. 25, 252903, 22.12.2014.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review