Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Original languageEnglish
Article number182404
Journal / PublicationApplied Physics Letters
Volume111
Issue number18
Publication statusPublished - 30 Oct 2017

Abstract

Spin orbit coupling in heavy metals allows the conversion of unpolarized light into an open-circuit voltage. We experimentally prove that this photo-spin voltaic effect is due to photo-excitation of carriers in the proximized layer and can exist for light in the visible range. While carrying out the experiment, we discovered that, in closed-circuit conditions, the anisotropic magnetoresistance of the proximized metal is a function of the light intensity. We name this effect photo-magnetoresistance. A magneto-transport model is presented that describes the change in magnetoresistance as a function of the light intensity.