Photoresponse properties of CdSe single-nanoribbon photodetectors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Yang Jiang
  • Jian Sheng Jie
  • Xiang Min Meng
  • Xia Fan
  • Shuit-Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)1795-1800
Journal / PublicationAdvanced Functional Materials
Volume17
Issue number11
Publication statusPublished - 23 Jul 2007

Abstract

Photodetectors are fabricated from individual single-crystal CdSe nanoribbons, and the photoresponse properties of the devices are studied systematically. The photodetector shows a high sensitivity towards excitation wavelength with a sharp cut-off at 710 nm, corresponding to the bandgap of CdSe. The device exhibits a high photo-to-dark current ratio of five orders of magnitude at 650 nm, and can function with excellent stability, reproducibility, and high response speed (<1 ms) in a wide range of switching frequency (up to 300 Hz). The photocurrent of the device shows a power-law dependence on light intensity. This finding together with the analysis of the hght intensity-dependent response speed reveals the existence of various traps at different energy levels (shallow and deep) in the bandgap. Coating with a thin SiO2 isolating layer increases the photocurrent but decreases the response speed of the CdSe nanoribbon, which is attributed to reduction of recombination centers on ribbon surface. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

Citation Format(s)

Photoresponse properties of CdSe single-nanoribbon photodetectors. / Jiang, Yang; Zhang, Wen Jun; Jie, Jian Sheng; Meng, Xiang Min; Fan, Xia; Lee, Shuit-Tong.

In: Advanced Functional Materials, Vol. 17, No. 11, 23.07.2007, p. 1795-1800.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal