Photoreflectance study of the chemically modified (100) GaAs surface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Orest J. Glembocki
  • Judah Ari Tucbmant
  • K. K. Ko
  • John A. Dagata
  • Adriana Giordanat
  • R. Kaplans
  • Charles Ed Stutz

Detail(s)

Original languageEnglish
Pages (from-to)96-102
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume2141
Publication statusPublished - 26 May 1994
Externally publishedYes

Conference

TitleSpectroscopic Characterization Techniques for Semiconductor Technology V 1994
PlaceUnited States
CityLos Angeles
Period23 - 29 January 1994

Abstract

Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

Bibliographic Note

Publication information for this record has been verified with the author(s) concerned.

Citation Format(s)

Photoreflectance study of the chemically modified (100) GaAs surface. / Glembocki, Orest J.; Tucbmant, Judah Ari; Ko, K. K.; Pang, Stella W.; Dagata, John A.; Giordanat, Adriana; Kaplans, R.; Stutz, Charles Ed.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2141, 26.05.1994, p. 96-102.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal