Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki; Judah Ari Tucbmant; K. K. Ko; Stella W. Pang; John A. Dagata; Adriana Giordanat; R. Kaplans; Charles Ed Stutz

doi:10.1117/12.176843

Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki
, Judah Ari Tucbmant
, K. K. Ko
, Stella W. Pang
, John A. Dagata
, Adriana Giordanat
, R. Kaplans
, Charles Ed Stutz

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P₂S₅ chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P₂S₅ passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

Original language	English
Pages (from-to)	96-102
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2141
DOIs	https://doi.org/10.1117/12.176843
Publication status	Published - 26 May 1994
Externally published	Yes
Event	Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 - Los Angeles, United States Duration: 23 Jan 1994 → 29 Jan 1994

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@article{511aefe86a2e4e24902f39a537e1e265,

title = "Photoreflectance study of the chemically modified (100) GaAs surface",

abstract = "Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.",

author = "Glembocki, \{Orest J.\} and Tucbmant, \{Judah Ari\} and Ko, \{K. K.\} and Pang, \{Stella W.\} and Dagata, \{John A.\} and Adriana Giordanat and R. Kaplans and Stutz, \{Charles Ed\}",

note = "Publication information for this record has been verified with the author(s) concerned.; Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 ; Conference date: 23-01-1994 Through 29-01-1994",

year = "1994",

month = may,

day = "26",

doi = "10.1117/12.176843",

language = "English",

volume = "2141",

pages = "96--102",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE - International Society for Optical Engineering",

}

TY - JOUR

T1 - Photoreflectance study of the chemically modified (100) GaAs surface

AU - Glembocki, Orest J.

AU - Tucbmant, Judah Ari

AU - Ko, K. K.

AU - Pang, Stella W.

AU - Dagata, John A.

AU - Giordanat, Adriana

AU - Kaplans, R.

AU - Stutz, Charles Ed

N1 - Publication information for this record has been verified with the author(s) concerned.

PY - 1994/5/26

Y1 - 1994/5/26

N2 - Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

AB - Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

UR - https://www.scopus.com/pages/publications/0003298140

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0003298140&origin=recordpage

U2 - 10.1117/12.176843

DO - 10.1117/12.176843

M3 - RGC 21 - Publication in refereed journal

SN - 0277-786X

VL - 2141

SP - 96

EP - 102

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Spectroscopic Characterization Techniques for Semiconductor Technology V 1994

Y2 - 23 January 1994 through 29 January 1994

ER -

Photoreflectance study of the chemically modified (100) GaAs surface

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