Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki; Judah Ari Tucbmant; K. K. Ko; Stella W. Pang; John A. Dagata; Adriana Giordanat; R. Kaplans; Charles Ed Stutz

doi:10.1117/12.176843

Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki, Judah Ari Tucbmant, K. K. Ko, Stella W. Pang, John A. Dagata, Adriana Giordanat, R. Kaplans, Charles Ed Stutz

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P₂S₅ chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P₂S₅ passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

Original language	English
Pages (from-to)	96-102
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2141
DOIs	https://doi.org/10.1117/12.176843
Publication status	Published - 26 May 1994
Externally published	Yes
Event	Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 - Los Angeles, United States Duration: 23 Jan 1994 → 29 Jan 1994

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@article{511aefe86a2e4e24902f39a537e1e265,

title = "Photoreflectance study of the chemically modified (100) GaAs surface",

abstract = "Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.",

author = "Glembocki, {Orest J.} and Tucbmant, {Judah Ari} and Ko, {K. K.} and Pang, {Stella W.} and Dagata, {John A.} and Adriana Giordanat and R. Kaplans and Stutz, {Charles Ed}",

note = "Publication information for this record has been verified with the author(s) concerned.; Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 ; Conference date: 23-01-1994 Through 29-01-1994",

year = "1994",

month = may,

day = "26",

doi = "10.1117/12.176843",

language = "English",

volume = "2141",

pages = "96--102",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE - International Society for Optical Engineering",

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TY - JOUR

T1 - Photoreflectance study of the chemically modified (100) GaAs surface

AU - Glembocki, Orest J.

AU - Tucbmant, Judah Ari

AU - Ko, K. K.

AU - Pang, Stella W.

AU - Dagata, John A.

AU - Giordanat, Adriana

AU - Kaplans, R.

AU - Stutz, Charles Ed

N1 - Publication information for this record has been verified with the author(s) concerned.

PY - 1994/5/26

Y1 - 1994/5/26

N2 - Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

AB - Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to pin the Feimi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

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U2 - 10.1117/12.176843

DO - 10.1117/12.176843

M3 - RGC 21 - Publication in refereed journal

SN - 0277-786X

VL - 2141

SP - 96

EP - 102

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Spectroscopic Characterization Techniques for Semiconductor Technology V 1994

Y2 - 23 January 1994 through 29 January 1994

ER -

Photoreflectance study of the chemically modified (100) GaAs surface

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