Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

5 Scopus Citations
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Author(s)

  • K. Zelazna
  • R. Kudrawiec
  • A. Luce
  • Y.J. Kuang (邝彦瑾)
  • C.W. Tu
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)99-104
Journal / PublicationSolar Energy Materials and Solar Cells
Volume188
Online published5 Sep 2018
Publication statusPublished - 15 Dec 2018
Externally publishedYes

Abstract

Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediate band with electrons is realized by doping with Si donors. Undoped and p-type doped (Be doped) GaNPAs films are studied as a references. Observation of all three absorption bands: VB → IB (a transition between the valence band and the IB), VB → CB (a transition between the valence band and the conduction band), and IB → CB (a transition between the IB and the conduction band), demonstrate that n-type doped GaNPAs layers act as intermediate band solar cell absorbers.

Research Area(s)

  • Band structure, GaNPAs, Intermediate band, Photoreflectance

Citation Format(s)

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers. / Zelazna, K.; Kudrawiec, R.; Luce, A.; Yu, K.-M.; Kuang (邝彦瑾), Y.J.; Tu, C.W.; Walukiewicz, W.

In: Solar Energy Materials and Solar Cells, Vol. 188, 15.12.2018, p. 99-104.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review