Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

K. Zelazna; R. Kudrawiec; A. Luce; K.-M. Yu; Y. J. Kuang (邝彦瑾); C. W. Tu; W. Walukiewicz

doi:10.1016/j.solmat.2018.08.024

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

K. Zelazna, R. Kudrawiec^*, A. Luce, K.-M. Yu, Y. J. Kuang (邝彦瑾), C. W. Tu, W. Walukiewicz

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

8 Citations (Scopus)

Abstract

Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediate band with electrons is realized by doping with Si donors. Undoped and p-type doped (Be doped) GaNPAs films are studied as a references. Observation of all three absorption bands: VB → IB (a transition between the valence band and the IB), VB → CB (a transition between the valence band and the conduction band), and IB → CB (a transition between the IB and the conduction band), demonstrate that n-type doped GaNPAs layers act as intermediate band solar cell absorbers.

Original language	English
Pages (from-to)	99-104
Journal	Solar Energy Materials and Solar Cells
Volume	188
Online published	5 Sept 2018
DOIs	https://doi.org/10.1016/j.solmat.2018.08.024
Publication status	Published - 15 Dec 2018
Externally published	Yes

Research Keywords

Band structure
GaNPAs
Intermediate band
Photoreflectance

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10.1016/j.solmat.2018.08.024

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@article{29dcef12569f4c59b5a953fd6bb64466,

title = "Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers",

abstract = "Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediate band with electrons is realized by doping with Si donors. Undoped and p-type doped (Be doped) GaNPAs films are studied as a references. Observation of all three absorption bands: VB → IB (a transition between the valence band and the IB), VB → CB (a transition between the valence band and the conduction band), and IB → CB (a transition between the IB and the conduction band), demonstrate that n-type doped GaNPAs layers act as intermediate band solar cell absorbers.",

keywords = "Band structure, GaNPAs, Intermediate band, Photoreflectance",

author = "K. Zelazna and R. Kudrawiec and A. Luce and K.-M. Yu and {Kuang (邝彦瑾)}, {Y. J.} and Tu, {C. W.} and W. Walukiewicz",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.solmat.2018.08.024",

language = "English",

volume = "188",

pages = "99--104",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

AU - Zelazna, K.

AU - Kudrawiec, R.

AU - Luce, A.

AU - Yu, K.-M.

AU - Kuang (邝彦瑾), Y. J.

AU - Tu, C. W.

AU - Walukiewicz, W.

PY - 2018/12/15

Y1 - 2018/12/15

N2 - Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediate band with electrons is realized by doping with Si donors. Undoped and p-type doped (Be doped) GaNPAs films are studied as a references. Observation of all three absorption bands: VB → IB (a transition between the valence band and the IB), VB → CB (a transition between the valence band and the conduction band), and IB → CB (a transition between the IB and the conduction band), demonstrate that n-type doped GaNPAs layers act as intermediate band solar cell absorbers.

AB - Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediate band with electrons is realized by doping with Si donors. Undoped and p-type doped (Be doped) GaNPAs films are studied as a references. Observation of all three absorption bands: VB → IB (a transition between the valence band and the IB), VB → CB (a transition between the valence band and the conduction band), and IB → CB (a transition between the IB and the conduction band), demonstrate that n-type doped GaNPAs layers act as intermediate band solar cell absorbers.

KW - Band structure

KW - GaNPAs

KW - Intermediate band

KW - Photoreflectance

UR - http://www.scopus.com/inward/record.url?scp=85052853799&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85052853799&origin=recordpage

U2 - 10.1016/j.solmat.2018.08.024

DO - 10.1016/j.solmat.2018.08.024

M3 - RGC 21 - Publication in refereed journal

SN - 0927-0248

VL - 188

SP - 99

EP - 104

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Abstract

Research Keywords

UN SDGs

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