Photoreflectance characterization of etch-induced damage in dry etched GaAs
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Publisher | Publ by Materials Research Society |
| Pages | 153-159 |
| Volume | 324 |
| ISBN (Print) | 1558992235 |
| Publication status | Published - 1994 |
| Externally published | Yes |
Publication series
| Name | |
|---|---|
| Volume | 324 |
| ISSN (Electronic) | 0272-9172 |
Conference
| Title | Proceedings of the 1993 Fall Meeting of the Materials Research Society |
|---|---|
| City | Boston, MA, USA |
| Period | 29 November - 2 December 1993 |
Link(s)
Abstract
Photoreflectance has been used to characterize the etch-induced damage in GaAs processed in an Ar/Cl2 plasma generated by an electron-cyclotron resonance (ECR) source. We show that the damage is localized to the surface and that it is most influenced by the RF power, with little effect from the microwave power. The Fermi-level is observed to be unchanged in n-GaAs and remains near midgap, while for p-GaAs, the Fermi level shifts from near the valence band to midgap. Etch-induced anisite defects are proposed as a possible source of the damage.
Citation Format(s)
Photoreflectance characterization of etch-induced damage in dry etched GaAs. / Glembocki, O. J.; Tuchman, J. A.; Ko, K. K. et al.
Materials Research Society Symposium Proceedings. Vol. 324 Publ by Materials Research Society, 1994. p. 153-159.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
