Photoreflectance characterization of etch-induced damage in dry etched GaAs

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

2 Scopus Citations
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Author(s)

  • O. J. Glembocki
  • J. A. Tuchman
  • K. K. Ko
  • A. Giordana
  • C. E. Stutz

Detail(s)

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages153-159
Volume324
ISBN (Print)1558992235
Publication statusPublished - 1994
Externally publishedYes

Publication series

Name
Volume324
ISSN (Electronic)0272-9172

Conference

TitleProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29 November - 2 December 1993

Abstract

Photoreflectance has been used to characterize the etch-induced damage in GaAs processed in an Ar/Cl2 plasma generated by an electron-cyclotron resonance (ECR) source. We show that the damage is localized to the surface and that it is most influenced by the RF power, with little effect from the microwave power. The Fermi-level is observed to be unchanged in n-GaAs and remains near midgap, while for p-GaAs, the Fermi level shifts from near the valence band to midgap. Etch-induced anisite defects are proposed as a possible source of the damage.

Citation Format(s)

Photoreflectance characterization of etch-induced damage in dry etched GaAs. / Glembocki, O. J.; Tuchman, J. A.; Ko, K. K.; Pang, S. W.; Giordana, A.; Stutz, C. E.

Materials Research Society Symposium Proceedings. Vol. 324 Publ by Materials Research Society, 1994. p. 153-159.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review