Photoluminescence spectroscopy and rutherford backscattering channeling evaluation of various capping techniques for rapid thermal annealing of ion-implanted ZnSe

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • E. L. Allen
  • F. X. Zach
  • K. M. Yu
  • E. D. Bourret

Detail(s)

Original languageEnglish
Pages (from-to)549-556
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume340
Publication statusPublished - 1994
Externally publishedYes

Conference

TitleProceedings of the MRS Symposium
CitySan Francisco, CA, USA
Period4 - 7 April 1994

Abstract

We report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DPIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm-2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Citation Format(s)

Photoluminescence spectroscopy and rutherford backscattering channeling evaluation of various capping techniques for rapid thermal annealing of ion-implanted ZnSe. / Allen, E. L.; Zach, F. X.; Yu, K. M.; Bourret, E. D.

In: Materials Research Society Symposium - Proceedings, Vol. 340, 1994, p. 549-556.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal