Photoluminescence from boron-doped titanium nitride nanocomposite thin films prepared by the magnetron sputtering method

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Sheng-Guo Lu
  • Yong-Hao Lu
  • Zheng-Kui Xu
  • Kwok-Wai Cheah

Detail(s)

Original languageEnglish
Pages (from-to)4002-4004
Journal / PublicationJournal of the American Ceramic Society
Volume90
Issue number12
Publication statusPublished - Dec 2007

Abstract

Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ∼5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350-900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film. © 2007 The American Ceramic Society.

Citation Format(s)

Photoluminescence from boron-doped titanium nitride nanocomposite thin films prepared by the magnetron sputtering method. / Lu, Sheng-Guo; Lu, Yong-Hao; Xu, Zheng-Kui; Cheah, Kwok-Wai.

In: Journal of the American Ceramic Society, Vol. 90, No. 12, 12.2007, p. 4002-4004.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review