Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

J. Guzman; S. J. Shin; C. Y. Liao; C. W. Yuan; P. R. Stone; O. D. Dubón; K. M. Yu; J. W. Beeman; M. Watanabe; J. W. Ager III; D. C. Chrzan; E. E. Haller

doi:10.1063/1.3266846

Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

J. Guzman, S. J. Shin, C. Y. Liao, C. W. Yuan, P. R. Stone, O. D. Dubón, K. M. Yu, J. W. Beeman, M. Watanabe, J. W. Ager III, D. C. Chrzan, E. E. Haller^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er³⁺ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the concentration of Ge atoms. Control experiments with argon ion implantation were used to show that the enhancement is due to the presence of Ge and not radiation damage. Furthermore, the Er³⁺ PL was found to be strongly influenced by the postgrowth annealing and the crystallinity of the Ge nanoclusters. © 2009 American Institute of Physics.

Original language	English
Article number	201904
Journal	Applied Physics Letters
Volume	95
Issue number	20
DOIs	https://doi.org/10.1063/1.3266846
Publication status	Published - 2009
Externally published	Yes

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@article{c92553e434774c8890ac68e319e481ef,

title = "Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters",

abstract = "The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er3+ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the concentration of Ge atoms. Control experiments with argon ion implantation were used to show that the enhancement is due to the presence of Ge and not radiation damage. Furthermore, the Er3+ PL was found to be strongly influenced by the postgrowth annealing and the crystallinity of the Ge nanoclusters. {\textcopyright} 2009 American Institute of Physics.",

author = "J. Guzman and Shin, {S. J.} and Liao, {C. Y.} and Yuan, {C. W.} and Stone, {P. R.} and Dub{\'o}n, {O. D.} and Yu, {K. M.} and Beeman, {J. W.} and M. Watanabe and {Ager III}, {J. W.} and Chrzan, {D. C.} and Haller, {E. E.}",

year = "2009",

doi = "10.1063/1.3266846",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

AU - Guzman, J.

AU - Shin, S. J.

AU - Liao, C. Y.

AU - Yuan, C. W.

AU - Stone, P. R.

AU - Dubón, O. D.

AU - Yu, K. M.

AU - Beeman, J. W.

AU - Watanabe, M.

AU - Ager III, J. W.

AU - Chrzan, D. C.

AU - Haller, E. E.

PY - 2009

Y1 - 2009

N2 - The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er3+ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the concentration of Ge atoms. Control experiments with argon ion implantation were used to show that the enhancement is due to the presence of Ge and not radiation damage. Furthermore, the Er3+ PL was found to be strongly influenced by the postgrowth annealing and the crystallinity of the Ge nanoclusters. © 2009 American Institute of Physics.

AB - The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er3+ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the concentration of Ge atoms. Control experiments with argon ion implantation were used to show that the enhancement is due to the presence of Ge and not radiation damage. Furthermore, the Er3+ PL was found to be strongly influenced by the postgrowth annealing and the crystallinity of the Ge nanoclusters. © 2009 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=70450240934&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-70450240934&origin=recordpage

U2 - 10.1063/1.3266846

DO - 10.1063/1.3266846

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201904

ER -

Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

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