Photoluminescence and self-interference in germanium-doped silica films

Y. M. Yang; L. W. Yang; M. Q. Cai; Paul K. Chu

doi:10.1063/1.2721784

Photoluminescence and self-interference in germanium-doped silica films

Y. M. Yang, L. W. Yang, M. Q. Cai, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

Germanium-doped silica films were prepared by magnetron cosputtering and postannealing. The photoluminescence properties and their dependence on the Ge contents and annealing temperature were investigated. Our experiments indicate that the observed light emission originates from the neutral oxygen vacancy defects. The substructures in the luminescence bands of the films were found to result from multiple-beam interferences of the emission in the optical cavity formed by the transparent films. © 2007 American Institute of Physics.

Original language	English
Article number	93503
Journal	Journal of Applied Physics
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.2721784
Publication status	Published - 2007

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title = "Photoluminescence and self-interference in germanium-doped silica films",

abstract = "Germanium-doped silica films were prepared by magnetron cosputtering and postannealing. The photoluminescence properties and their dependence on the Ge contents and annealing temperature were investigated. Our experiments indicate that the observed light emission originates from the neutral oxygen vacancy defects. The substructures in the luminescence bands of the films were found to result from multiple-beam interferences of the emission in the optical cavity formed by the transparent films. {\textcopyright} 2007 American Institute of Physics.",

author = "Yang, {Y. M.} and Yang, {L. W.} and Cai, {M. Q.} and Chu, {Paul K.}",

year = "2007",

doi = "10.1063/1.2721784",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Photoluminescence and self-interference in germanium-doped silica films

AU - Yang, Y. M.

AU - Yang, L. W.

AU - Cai, M. Q.

AU - Chu, Paul K.

PY - 2007

Y1 - 2007

N2 - Germanium-doped silica films were prepared by magnetron cosputtering and postannealing. The photoluminescence properties and their dependence on the Ge contents and annealing temperature were investigated. Our experiments indicate that the observed light emission originates from the neutral oxygen vacancy defects. The substructures in the luminescence bands of the films were found to result from multiple-beam interferences of the emission in the optical cavity formed by the transparent films. © 2007 American Institute of Physics.

AB - Germanium-doped silica films were prepared by magnetron cosputtering and postannealing. The photoluminescence properties and their dependence on the Ge contents and annealing temperature were investigated. Our experiments indicate that the observed light emission originates from the neutral oxygen vacancy defects. The substructures in the luminescence bands of the films were found to result from multiple-beam interferences of the emission in the optical cavity formed by the transparent films. © 2007 American Institute of Physics.

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U2 - 10.1063/1.2721784

DO - 10.1063/1.2721784

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 93503

ER -

Photoluminescence and self-interference in germanium-doped silica films

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