Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector : Effect of Surface Band Bending
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 6144690 |
| Pages (from-to) | 411-413 |
| Journal / Publication | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 3 |
| Online published | 3 Feb 2012 |
| Publication status | Published - Mar 2012 |
| Externally published | Yes |
Link(s)
Abstract
The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.
Research Area(s)
- Nanowire (NW), photodetector, relaxation time, surface band bending (SBB), ZnO
Citation Format(s)
Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending. / Chen, Ming-Wei; Retamal, Jose Ramon Duran; Chen, Cheng-Ying et al.
In: IEEE Electron Device Letters, Vol. 33, No. 3, 6144690, 03.2012, p. 411-413.
In: IEEE Electron Device Letters, Vol. 33, No. 3, 6144690, 03.2012, p. 411-413.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
