Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

Ming-Wei Chen; Jose Ramon Duran Retamal; Cheng-Ying Chen; Jr-Hau He

doi:10.1109/LED.2011.2180012

Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

Ming-Wei Chen
, Jose Ramon Duran Retamal
, Cheng-Ying Chen
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

61 Citations (Scopus)

Abstract

The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

Original language	English
Article number	6144690
Pages (from-to)	411-413
Journal	IEEE Electron Device Letters
Volume	33
Issue number	3
Online published	3 Feb 2012
DOIs	https://doi.org/10.1109/LED.2011.2180012
Publication status	Published - Mar 2012
Externally published	Yes

Research Keywords

Nanowire (NW)
photodetector
relaxation time
surface band bending (SBB)
ZnO

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10.1109/LED.2011.2180012

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@article{6a69c6abaebc4469bd3f5d06b6f1ac3b,

title = "Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending",

abstract = "The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.",

keywords = "Nanowire (NW), photodetector, relaxation time, surface band bending (SBB), ZnO",

author = "Ming-Wei Chen and Retamal, \{Jose Ramon Duran\} and Cheng-Ying Chen and Jr-Hau He",

year = "2012",

month = mar,

doi = "10.1109/LED.2011.2180012",

language = "English",

volume = "33",

pages = "411--413",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "3",

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TY - JOUR

T1 - Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector

T2 - Effect of Surface Band Bending

AU - Chen, Ming-Wei

AU - Retamal, Jose Ramon Duran

AU - Chen, Cheng-Ying

AU - He, Jr-Hau

PY - 2012/3

Y1 - 2012/3

N2 - The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

AB - The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

KW - Nanowire (NW)

KW - photodetector

KW - relaxation time

KW - surface band bending (SBB)

KW - ZnO

UR - https://www.scopus.com/pages/publications/84862777544

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84862777544&origin=recordpage

U2 - 10.1109/LED.2011.2180012

DO - 10.1109/LED.2011.2180012

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 33

SP - 411

EP - 413

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 6144690

ER -

Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

Abstract

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