Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

Thien Viet Pham; Manohar Rao; P. Andreasson; Yuan Peng; Junling Wang; K. B. Jinesh

doi:10.1063/1.4788680

Photocarrier generation in Cu_xO thin films deposited by radio frequency sputtering

Thien Viet Pham
, Manohar Rao
, P. Andreasson
, Yuan Peng
, Junling Wang
, K. B. Jinesh

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

33 Citations (Scopus)

Abstract

Copper oxides (Cu_xO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu₂O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu ₂O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu₂O was much larger that other phases. © 2013 American Institute of Physics.

Original language	English
Article number	032101
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4788680
Publication status	Published - 21 Jan 2013
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{bba8238c3847496d9b1e6bc1e4b7b855,

title = "Photocarrier generation in CuxO thin films deposited by radio frequency sputtering",

abstract = "Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu 2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases. {\textcopyright} 2013 American Institute of Physics.",

author = "Pham, \{Thien Viet\} and Manohar Rao and P. Andreasson and Yuan Peng and Junling Wang and Jinesh, \{K. B.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2013",

month = jan,

day = "21",

doi = "10.1063/1.4788680",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

AU - Pham, Thien Viet

AU - Rao, Manohar

AU - Andreasson, P.

AU - Peng, Yuan

AU - Wang, Junling

AU - Jinesh, K. B.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2013/1/21

Y1 - 2013/1/21

N2 - Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu 2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases. © 2013 American Institute of Physics.

AB - Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu 2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases. © 2013 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/84872934025

UR - https://www.scopus.com/pages/publications/84872934025#tab=impact

U2 - 10.1063/1.4788680

DO - 10.1063/1.4788680

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032101

ER -