TY - GEN
T1 - Photoacoustic determination of ambipolar transport parameters in semiconductors under applied electric field
AU - Dramicanin, Miroslav D.
AU - Ristovski, Zoran D.
PY - 1995
Y1 - 1995
N2 - In this paper the possibility for photoacoustic determination for semiconductor ambipolar transport parameters is shown. Semiconductor surface temperature variations are calculated for the case of d.c. electric field applied parallel to the sample surface. At sufficiently high modulation frequencies of the excitation light beam the photoacoustic signal amplitude exhibits a linear dependence on square of applied field intensity, with proportionality constant depending on excess carrier ambipolar mobility and recombination lifetime. The method for determination of semiconductor transport parameters from this linear slope is discussed.
AB - In this paper the possibility for photoacoustic determination for semiconductor ambipolar transport parameters is shown. Semiconductor surface temperature variations are calculated for the case of d.c. electric field applied parallel to the sample surface. At sufficiently high modulation frequencies of the excitation light beam the photoacoustic signal amplitude exhibits a linear dependence on square of applied field intensity, with proportionality constant depending on excess carrier ambipolar mobility and recombination lifetime. The method for determination of semiconductor transport parameters from this linear slope is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0029493472&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0029493472&origin=recordpage
M3 - RGC 32 - Refereed conference paper (with host publication)
VL - 1
SP - 153
EP - 156
BT - Proceedings of the International Conference on Microelectronics
PB - IEEE
T2 - Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)
Y2 - 12 September 1995 through 14 September 1995
ER -