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Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Abstract

Spin orbit coupling in heavy metals allows the conversion of unpolarized light into an open-circuit voltage. We experimentally prove that this photo-spin voltaic effect is due to photo-excitation of carriers in the proximized layer and can exist for light in the visible range. While carrying out the experiment, we discovered that, in closed-circuit conditions, the anisotropic magnetoresistance of the proximized metal is a function of the light intensity. We name this effect photo-magnetoresistance. A magneto-transport model is presented that describes the change in magnetoresistance as a function of the light intensity.
Original languageEnglish
Article number182404
JournalApplied Physics Letters
Volume111
Issue number18
DOIs
Publication statusPublished - 30 Oct 2017

Publisher's Copyright Statement

  • COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in D. Li and A. Ruotolo , "Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum", Appl. Phys. Lett. 111, 182404 (2017) and may be found at https://doi.org/10.1063/1.5002573.

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