Phosphorescence of red Os(fptz)2(PPh2Me)2 doped organic light-emitting devices with n and p hosts

Tswen-Hsin Liu; Shih-Feng Hsu; Meng-Hung Ho; Chi-Hung Liao; Yao-Shan Wu; Chin H. Chen; Yung-Liang Tung; Pei-Chi Wu; Yun Chi

doi:10.1063/1.2172405

Phosphorescence of red Os(fptz)₂(PPh₂Me)₂ doped organic light-emitting devices with n and p hosts

Tswen-Hsin Liu^*, Shih-Feng Hsu, Meng-Hung Ho, Chi-Hung Liao, Yao-Shan Wu, Chin H. Chen, Yung-Liang Tung, Pei-Chi Wu, Yun Chi

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

We have applied a stericly-hindered red phosphorescent dopant Os(fptz)₂(PPh₂Me)₂ [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh₂Me=phosphine ligand] in p-type 4,4′ - N, N' -dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.

Original language	English
Article number	063508
Journal	Applied Physics Letters
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.2172405
Publication status	Published - Feb 2006
Externally published	Yes

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@article{751b2df9305e4c969e6114cdad2bf582,

title = "Phosphorescence of red Os(fptz)2(PPh2Me)2 doped organic light-emitting devices with n and p hosts",

abstract = "We have applied a stericly-hindered red phosphorescent dopant Os(fptz)2(PPh2Me)2 [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh2Me=phosphine ligand] in p-type 4,4′ - N, N' -dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.",

author = "Tswen-Hsin Liu and Shih-Feng Hsu and Meng-Hung Ho and Chi-Hung Liao and Yao-Shan Wu and Chen, {Chin H.} and Yung-Liang Tung and Pei-Chi Wu and Yun Chi",

year = "2006",

month = feb,

doi = "10.1063/1.2172405",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Phosphorescence of red Os(fptz)2(PPh2Me)2 doped organic light-emitting devices with n and p hosts

AU - Liu, Tswen-Hsin

AU - Hsu, Shih-Feng

AU - Ho, Meng-Hung

AU - Liao, Chi-Hung

AU - Wu, Yao-Shan

AU - Chen, Chin H.

AU - Tung, Yung-Liang

AU - Wu, Pei-Chi

AU - Chi, Yun

PY - 2006/2

Y1 - 2006/2

N2 - We have applied a stericly-hindered red phosphorescent dopant Os(fptz)2(PPh2Me)2 [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh2Me=phosphine ligand] in p-type 4,4′ - N, N' -dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.

AB - We have applied a stericly-hindered red phosphorescent dopant Os(fptz)2(PPh2Me)2 [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh2Me=phosphine ligand] in p-type 4,4′ - N, N' -dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.

UR - http://www.scopus.com/inward/record.url?scp=32444439442&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-32444439442&origin=recordpage

U2 - 10.1063/1.2172405

DO - 10.1063/1.2172405

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063508

ER -