π-σ-Phosphonic acid organic monolayer-amorphous sol-gel hafnium oxide hybrid dielectric for low-voltage organic transistors on plastic

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Orb Acton
  • Guy G. Ting II
  • Hong Ma
  • Daniel Hutchins
  • Ying Wang
  • Balaji Purushothaman
  • John E. Anthony

Detail(s)

Original languageEnglish
Pages (from-to)7929-7936
Journal / PublicationJournal of Materials Chemistry
Volume19
Issue number42
Publication statusPublished - 2009
Externally publishedYes

Abstract

A vacuum-free solution processed hybrid dielectric composed of an anthryl-alkyl-phosphonic acid (π-σ-PA) self-assembled monolayer on an amorphous sol-gel processed hafnium oxide (HfOx) is demonstrated for low-voltage organic thin film transistors (OTFTs) on plastic substrates. The π-σ-PA/HfOx hybrid dielectric provides high capacitance (0.54 F cm-2) and low leakage current (2 × 10-8 A cm-2), and has a chemically and electrically compatible dielectric interface for evaporated and solution processed acene semiconductors. The utility of this dielectric is demonstrated by fabricating pentacene and 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) based OTFTs with operating voltages under 2 V, subthreshold slopes as low as 100 mV dec -1, and average mobilities of 0.32 cm2 V-1 s-1 and 0.38 cm2 V-1 s-1, for pentacene and TIPS-PEN, respectively. © 2009 The Royal Society of Chemistry.

Citation Format(s)

π-σ-Phosphonic acid organic monolayer-amorphous sol-gel hafnium oxide hybrid dielectric for low-voltage organic transistors on plastic. / Acton, Orb; Ting II, Guy G.; Ma, Hong; Hutchins, Daniel; Wang, Ying; Purushothaman, Balaji; Anthony, John E.; Jen, Alex K.-Y.

In: Journal of Materials Chemistry, Vol. 19, No. 42, 2009, p. 7929-7936.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review