Phosphine oxide monolayers on SiO2 surfaces
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 4440-4442 |
| Journal / Publication | Angewandte Chemie - International Edition |
| Volume | 47 |
| Issue number | 23 |
| Publication status | Published - 26 May 2008 |
| Externally published | Yes |
Link(s)
Abstract
(Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO 2 substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Research Area(s)
- Atomic force microscopy, Hydrogen bonds, Monolayers, Phosphorus, Surface chemistry
Citation Format(s)
Phosphine oxide monolayers on SiO2 surfaces. / Yerushalmi, Roie; Ho, Johnny C.; Fan, Zhiyong et al.
In: Angewandte Chemie - International Edition, Vol. 47, No. 23, 26.05.2008, p. 4440-4442.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
