Phonon scattering induced carrier resistivity in twisted double-bilayer graphene

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Article number245436
Journal / Publication Physical Review B: covering condensed matter and materials physics
Volume101
Issue number24
Publication statusPublished - 15 Jun 2020

Abstract

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle θ. We show that at small twist angles (θ∼1) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system and provide an order of magnitude estimation of the superconducting transition temperature.