Abstract
In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle θ. We show that at small twist angles (θ∼1∘) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system and provide an order of magnitude estimation of the superconducting transition temperature.
| Original language | English |
|---|---|
| Article number | 245436 |
| Journal | Physical Review B: covering condensed matter and materials physics |
| Volume | 101 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 15 Jun 2020 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Li, X., Wu, F., & Das Sarma, S. (2020). Phonon scattering induced carrier resistivity in twisted double-bilayer graphene. Physical Review B: covering condensed matter and materials physics, 101(24), [245436]. https://doi.org/10.1103/PhysRevB.101.245436. The copyright of this article is owned by American Physical Society.
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