Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

Jiwei Zhai; Bo Shen; Xi Yao; Zhengkui Xu; Xin Li; Haydn Chen

doi:10.1007/s10971-007-0767-z

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing

Jiwei Zhai, Bo Shen, Xi Yao, Zhengkui Xu, Xin Li, Haydn Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) and Pb(Nb,Zr,Sn,Ti)O₃ (PNZST) thin films have been fabricated on LaNiO₃/Pt/Ti/SiO₂/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.

Original language	English
Pages (from-to)	369-373
Journal	Journal of Sol-Gel Science and Technology
Volume	42
Issue number	3
DOIs	https://doi.org/10.1007/s10971-007-0767-z
Publication status	Published - Jun 2007

Research Keywords

Antiferroelectric
Electrical property
Phase transformation
Sol-gel process
Thin film

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@article{4efe78cdef8c4415924e4577c902bad1,

title = "Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing",

abstract = "Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. {\textcopyright} Springer Science + Business Media, LLC 2007.",

keywords = "Antiferroelectric, Electrical property, Phase transformation, Sol-gel process, Thin film",

author = "Jiwei Zhai and Bo Shen and Xi Yao and Zhengkui Xu and Xin Li and Haydn Chen",

year = "2007",

month = jun,

doi = "10.1007/s10971-007-0767-z",

language = "English",

volume = "42",

pages = "369--373",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "3",

}

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing. / Zhai, Jiwei; Shen, Bo; Yao, Xi et al.
In: Journal of Sol-Gel Science and Technology, Vol. 42, No. 3, 06.2007, p. 369-373.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

AU - Zhai, Jiwei

AU - Shen, Bo

AU - Yao, Xi

AU - Xu, Zhengkui

AU - Li, Xin

AU - Chen, Haydn

PY - 2007/6

Y1 - 2007/6

N2 - Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.

AB - Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.

KW - Antiferroelectric

KW - Electrical property

KW - Phase transformation

KW - Sol-gel process

KW - Thin film

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U2 - 10.1007/s10971-007-0767-z

DO - 10.1007/s10971-007-0767-z

M3 - RGC 21 - Publication in refereed journal

SN - 0928-0707

VL - 42

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EP - 373

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

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