Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 369-373 |
Journal / Publication | Journal of Sol-Gel Science and Technology |
Volume | 42 |
Issue number | 3 |
Publication status | Published - Jun 2007 |
Link(s)
Abstract
Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.
Research Area(s)
- Antiferroelectric, Electrical property, Phase transformation, Sol-gel process, Thin film
Citation Format(s)
Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing. / Zhai, Jiwei; Shen, Bo; Yao, Xi et al.
In: Journal of Sol-Gel Science and Technology, Vol. 42, No. 3, 06.2007, p. 369-373.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review