Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

Jiwei Zhai; Bo Shen; Xi Yao; Zhengkui Xu; Xin Li; Haydn Chen

doi:10.1007/s10971-007-0767-z

Author(s)

Jiwei Zhai
Bo Shen
Xi Yao
Zhengkui Xu
Xin Li
And 1 others

Haydn Chen

Detail(s)

Original language	English
Pages (from-to)	369-373
Journal / Publication	Journal of Sol-Gel Science and Technology
Volume	42
Issue number	3
Publication status	Published - Jun 2007

Link(s)

DOI	DOI https://doi.org/10.1007/s10971-007-0767-z Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-34247403399&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(4efe78cd-ef8c-4415-924e-4577c902bad1).html

Abstract

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) and Pb(Nb,Zr,Sn,Ti)O₃ (PNZST) thin films have been fabricated on LaNiO₃/Pt/Ti/SiO₂/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.

Research Area(s)

Antiferroelectric, Electrical property, Phase transformation, Sol-gel process, Thin film

Citation Format(s)

[ RIS ] [ BibTeX ]

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing. / Zhai, Jiwei; Shen, Bo; Yao, Xi et al.

In: Journal of Sol-Gel Science and Technology, Vol. 42, No. 3, 06.2007, p. 369-373.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Zhai, J, Shen, B, Yao, X, Xu, Z, Li, X & Chen, H 2007, 'Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing', Journal of Sol-Gel Science and Technology, vol. 42, no. 3, pp. 369-373. https://doi.org/10.1007/s10971-007-0767-z

Zhai, J., Shen, B., Yao, X., Xu, Z., Li, X., & Chen, H. (2007). Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing. Journal of Sol-Gel Science and Technology, 42(3), 369-373. https://doi.org/10.1007/s10971-007-0767-z

Zhai J, Shen B, Yao X, Xu Z, Li X, Chen H. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing. Journal of Sol-Gel Science and Technology. 2007 Jun;42(3):369-373. doi: 10.1007/s10971-007-0767-z

Zhai, Jiwei ; Shen, Bo ; Yao, Xi et al. / Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO ₃-buffered silicon substrates by sol-gel processing. In: Journal of Sol-Gel Science and Technology. 2007 ; Vol. 42, No. 3. pp. 369-373.