Phase separation in InGaN/GaN multiple quantum wells

M. D. McCluskey; L. T. Romano; B. S. Krusor; D. P. Bour; C. Chua; N. M. Johnson; Kin Man Yu

doi:10.1557/proc-482-985

Phase separation in InGaN/GaN multiple quantum wells

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, C. Chua, N. M. Johnson, Kin Man Yu

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

2 Citations (Scopus)

Abstract

Evidence is presented for phase separation in In_0.27Ga_0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

Original language	English
Pages (from-to)	985-989
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-985
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1 Dec 1997 → 4 Dec 1997

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@article{5c744ce577054a3daf59770aa677a411,

title = "Phase separation in InGaN/GaN multiple quantum wells",

abstract = "Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.",

author = "McCluskey, {M. D.} and Romano, {L. T.} and Krusor, {B. S.} and Bour, {D. P.} and C. Chua and Johnson, {N. M.} and Yu, {Kin Man}",

year = "1997",

doi = "10.1557/proc-482-985",

language = "English",

volume = "482",

pages = "985--989",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Phase separation in InGaN/GaN multiple quantum wells

AU - McCluskey, M. D.

AU - Romano, L. T.

AU - Krusor, B. S.

AU - Bour, D. P.

AU - Chua, C.

AU - Johnson, N. M.

AU - Yu, Kin Man

PY - 1997

Y1 - 1997

N2 - Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

AB - Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

UR - http://www.scopus.com/inward/record.url?scp=0031386534&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031386534&origin=recordpage

U2 - 10.1557/proc-482-985

DO - 10.1557/proc-482-985

M3 - RGC 22 - Publication in policy or professional journal

SN - 0272-9172

VL - 482

SP - 985

EP - 989

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Phase separation in InGaN/GaN multiple quantum wells

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