Phase separation in InGaN/GaN multiple quantum wells
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 985-989 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 482 |
| Publication status | Published - 1997 |
| Externally published | Yes |
Conference
| Title | Proceedings of the 1997 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 1 - 4 December 1997 |
Link(s)
Abstract
Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.
Citation Format(s)
Phase separation in InGaN/GaN multiple quantum wells. / McCluskey, M. D.; Romano, L. T.; Krusor, B. S. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 482, 1997, p. 985-989.
In: Materials Research Society Symposium - Proceedings, Vol. 482, 1997, p. 985-989.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
