Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge-Sb-Te Combinatorial Thin Films

In this paper, the superlattice-like (SLL) Ge-Sb-Te combinatorial thin films were prepared by using a high-throughput ion beam sputtering system. The phase evolution and amorphous stability of such films undergoing heat treatment as a function of the coating sequence and modulation period were systematically studied. The composition structure diagram was constructed via an automated process of data obtained by high-throughput synchrotron micro-X-ray diffraction and lab-based micro-X-ray fluorescence. The element distribution and microstructure in the depth direction of the SLL thin films were characterized with time-of-flight secondary ion mass spectrometry and transmission electron microscopy, respectively. These studies showed that the coating sequence has a significant effect on the element distribution in the as-deposited SLL thin films and the structure of the final product upon solid-state reaction. Reducing the modulation period of the SLL thin film improves the stability of the amorphous Ge-Sb-Te phase. This work lays a solid foundation for the rational design of SLL Ge-Sb-Te thin films to improve their performance.