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Abstract
Zinc (Zn) has arisen as a significant suppressor of vacancy formation in halide perovskites, establishing its pivotal role in defect engineering for these materials. Herein, the Zn-catalyzed vapor-liquid-solid (VLS) route is reported to render black-phase CsPbI3 nanowires (NWs) operationally stable at room temperature. Based on first-principle calculations, the doped Zn2+ can not only lead to the partial crystal lattice distortion but also reduce the formation energy (absolute value) from the black phase to the yellow phase, improving the stability of the desired black-phase CsPbI3 NWs. A series of contrast tests further confirm the stabilization effect of the Zn-doped strategy. Besides, the polarization-sensitive characteristics of black-phase CsPbI3 NWs are revealed. This work highlights the importance of phase stabilization engineering for CsPbI3 NWs and their potential applications in anisotropic optoelectronics. © 2024 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
Original language | English |
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Article number | 2314309 |
Journal | Advanced Functional Materials |
Volume | 34 |
Issue number | 21 |
Online published | 31 Jan 2024 |
DOIs | |
Publication status | Published - 22 May 2024 |
Funding
D.L. and P.S.X. contributed equally to this research, which was financially supported by a fellowship grant (CityU RFS2021-1S04) and a Collaborative Research Equipment Grant (C1015-21EF), both awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China.
Research Keywords
- halide perovskite
- nanowire
- optoelectronic anisotropy
- vacancy suppressor
- Zn-doping
Publisher's Copyright Statement
- This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/
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RFS: Developing Negative-Capacitance Nanowire Transistor Arrays and Integrated Circuits for Next-Generation Flexible Electronics
HO, J. C. Y. (Principal Investigator / Project Coordinator)
1/01/21 → …
Project: Research