Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy

Xiaodong Zheng; Wei Han; Ke Yang; Lok Wing Wong; Chi Shing Tsang; Ka Hei Lai; Fangyuan Zheng; Tiefeng Yang; Shu Ping Lau; Thuc Hue Ly; Ming Yang; Jiong Zhao

doi:10.1126/sciadv.abo0773

Phase and polarization modulation in two-dimensional In₂Se₃ via in situ transmission electron microscopy

Xiaodong Zheng (Co-first Author), Wei Han (Co-first Author), Ke Yang (Co-first Author), Lok Wing Wong, Chi Shing Tsang, Ka Hei Lai, Fangyuan Zheng, Tiefeng Yang, Shu Ping Lau, Thuc Hue Ly^*, Ming Yang^*, Jiong Zhao^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In₂Se₃ with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In₂Se₃ remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In₂Se₃. We achieve reversible AFE and out-of-plane FE phase transition in 2D In₂Se₃ by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In₂Se₃ can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

Original language	English
Article number	eabo0773
Journal	Science Advances
Volume	8
Issue number	42
Online published	21 Oct 2022
DOIs	https://doi.org/10.1126/sciadv.abo0773
Publication status	Published - 21 Oct 2022

Funding

This work was supported by the National Natural Science Foundation of China (grant nos. 51872248, 51922113, 52173230, and 22105162), Hong Kong Research Grant Council Collaborative Research Fund (project no. C5029-18E), Early Career Scheme (project no. 25301018), the Hong Kong Research Grant Council General Research Fund (project nos. 11312022, 11300820 and 15302419), the City University of Hong Kong (project nos. 6000758 and 9229074), The Hong Kong Polytechnic University (project nos. 1-ZVGH, ZVRP, 1-BE47, and ZE2F), and the Shenzhen Science, Technology and Innovation Commission (project no. JCYJ20200109110213442).

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title = "Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy",

abstract = "Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In2Se3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In2Se3. We achieve reversible AFE and out-of-plane FE phase transition in 2D In2Se3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In2Se3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.",

author = "Xiaodong Zheng and Wei Han and Ke Yang and Wong, {Lok Wing} and Tsang, {Chi Shing} and Lai, {Ka Hei} and Fangyuan Zheng and Tiefeng Yang and Lau, {Shu Ping} and Ly, {Thuc Hue} and Ming Yang and Jiong Zhao",

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month = oct,

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doi = "10.1126/sciadv.abo0773",

language = "English",

volume = "8",

journal = "Science Advances",

issn = "2375-2548",

publisher = "American Association for the Advancement of Science",

number = "42",

}

Phase and polarization modulation in two-dimensional In₂Se₃ via in situ transmission electron microscopy. / Zheng, Xiaodong (Co-first Author); Han, Wei (Co-first Author); Yang, Ke (Co-first Author) et al.
In: Science Advances, Vol. 8, No. 42, eabo0773, 21.10.2022.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy

AU - Zheng, Xiaodong

AU - Han, Wei

AU - Yang, Ke

AU - Wong, Lok Wing

AU - Tsang, Chi Shing

AU - Lai, Ka Hei

AU - Zheng, Fangyuan

AU - Yang, Tiefeng

AU - Lau, Shu Ping

AU - Ly, Thuc Hue

AU - Yang, Ming

AU - Zhao, Jiong

PY - 2022/10/21

Y1 - 2022/10/21

N2 - Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In2Se3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In2Se3. We achieve reversible AFE and out-of-plane FE phase transition in 2D In2Se3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In2Se3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

AB - Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In2Se3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In2Se3. We achieve reversible AFE and out-of-plane FE phase transition in 2D In2Se3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In2Se3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

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DO - 10.1126/sciadv.abo0773

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JO - Science Advances

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Phase and polarization modulation in two-dimensional In₂Se₃ via in situ transmission electron microscopy

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