Performance-Enhancing Selector via Symmetrical Multilayer Design

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

29 Scopus Citations
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Author(s)

  • Yiming Sun
  • Xiaolong Zhao
  • Cheng Song
  • Kun Xu
  • Yue Xi
  • Jun Yin
  • Ziyu Wang
  • Xiaofeng Zhou
  • Xianzhe Chen
  • Guoyi Shi
  • Hangbing Lv
  • Qi Liu
  • Fei Zeng
  • Huaqiang Wu
  • Ming Liu
  • Feng Pan

Detail(s)

Original languageEnglish
Article number1808376
Journal / PublicationAdvanced Functional Materials
Volume29
Issue number13
Online published9 Jan 2019
Publication statusPublished - 28 Mar 2019
Externally publishedYes

Abstract

Two-terminal selectors with high nonlinearity, based on bidirectional threshold switching (TS) behaviors, are considered as a crucial element of crossbar integration for emerging nonvolatile memory and neuromorphic network. Although great efforts have been made to obtain various selectors, existing selectors cannot fully satisfy the rigorous standard of assorted memristive elements and it is in great demand to enhance the performance. Here, a new type of Ag/TaO x /TaO y /TaO x /Ag (x < y) selector based on homogeneous trilayered oxides is developed to attain the required parameters including bidirectional TS operation, a large selectivity of ≈10 10 , a high compliance current up to 1 mA, and ultralow switching voltages under 0.2 V. Tunable operation voltages can be realized by modulating the thickness of inserted TaO y . All-TaO x -based integrated 1S1R (one selector and one memristor) cells, prepared completely by magnetron sputtering and no need of a middle electrode, exhibit a nonlinear feature, which is quite characteristic for the crossbar devices, avoiding undesired crosstalk current issues. The tantalum-oxide-based homojunctions offer high insulation, low ion mobility, and rich interfaces, which is responsible for the modulation of Ag conductive filaments and corresponding high-performance cation-based selector. These findings might advance practical implementation of two-terminal selectors in emerging memories, especially resistive random access memories.

Research Area(s)

  • 1S1R, conductive filaments, multilayers, selector, TaOx, threshold switching

Citation Format(s)

Performance-Enhancing Selector via Symmetrical Multilayer Design. / Sun, Yiming; Zhao, Xiaolong; Song, Cheng; Xu, Kun; Xi, Yue; Yin, Jun; Wang, Ziyu; Zhou, Xiaofeng; Chen, Xianzhe; Shi, Guoyi; Lv, Hangbing; Liu, Qi; Zeng, Fei; Zhong, Xiaoyan; Wu, Huaqiang; Liu, Ming; Pan, Feng.

In: Advanced Functional Materials, Vol. 29, No. 13, 1808376, 28.03.2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review