Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wei Shi (施薇)
  • Junsheng Yu (于军胜)
  • Wei Huang (黄伟)
  • Xinge Yu (于欣格)
  • Yifan Zheng (郑毅帆)

Detail(s)

Original languageEnglish
Article number111607
Journal / PublicationApplied Physics Letters
Volume102
Issue number11
Publication statusPublished - 18 Mar 2013
Externally publishedYes

Abstract

Electrode buffer layer has been extensively studied to improve the performance of organic field-effect transistor (OFET). Here, poly(methylmethacrylate) (PMMA) was employed as an electrode buffer layer between poly(3-hexylthiophene) (P3HT) layer and gold electrodes in OFETs. These OFETs exhibited nearly five-fold enhancement of hole mobility. Through atomic force microscope and grazing-incidence X-ray diffraction analyses, the performance enhancement was attributed to the uniformity and hydrophobicity of PMMA surface, which led to a remarkable reduction of contact resistance at P3HT/electrode interface. This study provides a facile strategy for the performance enhancement of OFET and insights into the essentiality of buffer layers.

Citation Format(s)

Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer. / Wei Shi (施薇); Junsheng Yu (于军胜); Wei Huang (黄伟), ; Xinge Yu (于欣格); Yifan Zheng (郑毅帆).

In: Applied Physics Letters, Vol. 102, No. 11, 111607, 18.03.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review