P-BN/n-Si heterojunction prepared by beryllium ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)219-222
Journal / PublicationChinese Physics Letters
Volume25
Issue number1
Publication statusPublished - 1 Jan 2008

Abstract

A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of sp2- and sp3-hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion energy of 100keV with the dose of 5 × 1015 cm -2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2 × 10 5 Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation. © 2008 Chinese Physical Society and IOP Publishing Ltd.

Citation Format(s)

P-BN/n-Si heterojunction prepared by beryllium ion implantation. / He, Bin; Chen, Guang-Hua; Li, Zhi-Zhong; Deng, Jin-Xiang; Zhang, Wun-Jun.

In: Chinese Physics Letters, Vol. 25, No. 1, 01.01.2008, p. 219-222.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review