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Passive Resonant Level Shifter for Suppression of Crosstalk Effect and Reduction of Body-Diode Loss in SiC-Based Bridge Leg

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

A passive level shifter that can suppress the effect of the unavoidable crosstalk phenomenon in bridge-leg configuration and produce low off-state gate-source voltage to result in low body-diode forward voltage of SiC MOSFETs will be presented. Its structure consists of two main parts. The first one is a passive level shifter that can give a static negative gate-source voltage upon turning off the SiC MOSFET. The second one is a resonant tank that can produce voltage pulses to lower the spurious triggering pulses to a level below the gate-source threshold voltage, thereby avoiding spurious triggering. The proposed level shifter is simple and does not require any extra voltage source and switching network. Its performance has been evaluated on a 1kW SiC-based H-bridge inverter. Experimental results show that the total loss of the inverter can be reduced by 16.43% with the level shifter.
Original languageEnglish
Title of host publication10th Anniversary ECCE 2018, IEEE ENERGY CONVERSION CONGRESS & EXPO
PublisherIEEE
Pages3510-3516
ISBN (Electronic)9781479973125
ISBN (Print)9781479973118
DOIs
Publication statusPublished - Sept 2018
Event10th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2018) - Portland, United States
Duration: 23 Sept 201827 Sept 2018
http://www.ieee-ecce.org/2018/

Publication series

NameIEEE Energy Conversion Congress and Exposition
ISSN (Print)2329-3721

Conference

Conference10th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2018)
Abbreviated titleECCE 2018
PlaceUnited States
CityPortland
Period23/09/1827/09/18
Internet address

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