Abstract
A passive level shifter that can suppress the effect of the unavoidable crosstalk phenomenon in bridge-leg configuration and produce low off-state gate-source voltage to result in low body-diode forward voltage of SiC MOSFETs will be presented. Its structure consists of two main parts. The first one is a passive level shifter that can give a static negative gate-source voltage upon turning off the SiC MOSFET. The second one is a resonant tank that can produce voltage pulses to lower the spurious triggering pulses to a level below the gate-source threshold voltage, thereby avoiding spurious triggering. The proposed level shifter is simple and does not require any extra voltage source and switching network. Its performance has been evaluated on a 1kW SiC-based H-bridge inverter. Experimental results show that the total loss of the inverter can be reduced by 16.43% with the level shifter.
| Original language | English |
|---|---|
| Title of host publication | 10th Anniversary ECCE 2018, IEEE ENERGY CONVERSION CONGRESS & EXPO |
| Publisher | IEEE |
| Pages | 3510-3516 |
| ISBN (Electronic) | 9781479973125 |
| ISBN (Print) | 9781479973118 |
| DOIs | |
| Publication status | Published - Sept 2018 |
| Event | 10th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2018) - Portland, United States Duration: 23 Sept 2018 → 27 Sept 2018 http://www.ieee-ecce.org/2018/ |
Publication series
| Name | IEEE Energy Conversion Congress and Exposition |
|---|---|
| ISSN (Print) | 2329-3721 |
Conference
| Conference | 10th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2018) |
|---|---|
| Abbreviated title | ECCE 2018 |
| Place | United States |
| City | Portland |
| Period | 23/09/18 → 27/09/18 |
| Internet address |
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