Particle-in-cell simulation of plasma immersion ion implantation (PIII) of industrial gears

Dixon T K Kwok; Paul K. Chu

doi:10.1109/PLASMA.2000.854642

Particle-in-cell simulation of plasma immersion ion implantation (PIII) of industrial gears

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Overview

View graph of relations

Author(s)

Dixon T K Kwok
Paul K. Chu

Related Research Unit(s)

City University of Hong Kong

Detail(s)

Original language	English
Journal / Publication	IEEE International Conference on Plasma Science
Publication status	Published - 2000

Conference

Title	ICOPS 2000 - 27th IEEE International Conference on Plasma Science
City	New Orleans, LA, USA
Period	4 - 7 June 2000

Link(s)

DOI	DOI https://doi.org/10.1109/PLASMA.2000.854642 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0033705857&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(fc44f28e-1167-4965-b4c5-584cf1e1d076).html

Abstract

The plasma immersion ion implantation (PIII) process of industrial gears is investigated using particle-in-cell (PIC) simulation. The incident dose and impact angle along the surface of the tooth are derived and the results indicate that a long implantation pulse will implant more ions at the bottom of tooth at normal angle since the momentum of the incoming ions accelerated at the middle and end period of the pulse will overcome the attractive force from the sidewall for the tooth. Therefore, shorter pulse duration will implant the whole surface of the tooth more uniformly.