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Particle-in-cell simulation of plasma immersion ion implantation (PIII) of industrial gears

Dixon T K Kwok, Paul K. Chu

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

Abstract

The plasma immersion ion implantation (PIII) process of industrial gears is investigated using particle-in-cell (PIC) simulation. The incident dose and impact angle along the surface of the tooth are derived and the results indicate that a long implantation pulse will implant more ions at the bottom of tooth at normal angle since the momentum of the incoming ions accelerated at the middle and end period of the pulse will overcome the attractive force from the sidewall for the tooth. Therefore, shorter pulse duration will implant the whole surface of the tooth more uniformly.
Original languageEnglish
JournalIEEE International Conference on Plasma Science
DOIs
Publication statusPublished - 2000
EventICOPS 2000 - 27th IEEE International Conference on Plasma Science - New Orleans, LA, USA
Duration: 4 Jun 20007 Jun 2000

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