Parameter Extraction and Modeling of Schottky Diodes: An Extension of the Resonance Based Inductance Extraction Method

Haorui Luo, Wenrui Hu, Yongxin Guo

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

5 Citations (Scopus)

Abstract

In this paper, a full parameter extraction flow of Schottky diodes is proposed as the extension of previous resonance-based inductance extraction method. This extraction flow is applied to the model development of MACOM MA4E1317 and shows satisfying modeling accuracy. The full parameters of MACOM MA4E1317 are extracted and provided, which also helps solve current dilemma of lacking accurate high-frequency Schottky diode models. © 2021 IEEE.
Original languageEnglish
Title of host publication2021 IEEE MTT-S International Wireless Symposium (IWS 2021) - Proceedings
PublisherIEEE
Number of pages3
ISBN (Electronic)9781665435277
ISBN (Print)9781665435284
DOIs
Publication statusPublished - 2021
Externally publishedYes
Event8th IEEE MTT-S International Wireless Symposium (IWS 2021) - Nanjing, China
Duration: 23 May 202126 May 2021
http://www.em-conf.com/iws2021/

Publication series

NameIEEE MTT-S International Wireless Symposium, IWS - Proceedings

Conference

Conference8th IEEE MTT-S International Wireless Symposium (IWS 2021)
Abbreviated titleIEEE IWS 2021
PlaceChina
CityNanjing
Period23/05/2126/05/21
Internet address

Research Keywords

  • Extraction
  • Modeling
  • Schottky diode

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