Abstract
Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.
| Original language | English |
|---|---|
| Pages (from-to) | 3735-3739 |
| Journal | Journal of Applied Physics |
| Volume | 51 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1980 |
| Externally published | Yes |
Bibliographical note
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