p-Type InN and In-rich InGaN

J. W. Ager III; R. E. Jones; D. M. Yamaguchi; K. M. Yu; W. Walukiewicz; S. X. Li; E. E. Haller; H. Lu; W. J. Schaff

doi:10.1002/pssb.200674762

p-Type InN and In-rich InGaN

J. W. Ager III^*, R. E. Jones, D. M. Yamaguchi, K. M. Yu, W. Walukiewicz, S. X. Li, E. E. Haller, H. Lu, W. J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

26 Citations (Scopus)

Abstract

Capacitance-voltage (CV) measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p-type activity beneath a surface inversion layer in Mg-doped InN and In-rich InGaN. Analysis of CV data using the Poisson equation allows net charge as a function of depth to be determined. In undoped InN, good agreement of the net donor concentration below the surface accumulation layer with bulk Hall effect data is obtained. In Mg-doped InN and InGaN, the CV data are shown to be consistent with the presence of a net acceptor concentration N_A-N_D near 10¹⁹ cm^-3 below a surface inversion laver. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	1820-1824
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	6
DOIs	https://doi.org/10.1002/pssb.200674762
Publication status	Published - Jun 2007
Externally published	Yes

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@article{20b0c402756246bab62498eb02775a13,

title = "p-Type InN and In-rich InGaN",

abstract = "Capacitance-voltage (CV) measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p-type activity beneath a surface inversion layer in Mg-doped InN and In-rich InGaN. Analysis of CV data using the Poisson equation allows net charge as a function of depth to be determined. In undoped InN, good agreement of the net donor concentration below the surface accumulation layer with bulk Hall effect data is obtained. In Mg-doped InN and InGaN, the CV data are shown to be consistent with the presence of a net acceptor concentration NA-ND near 1019 cm-3 below a surface inversion laver. {\textcopyright} 2007 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "{Ager III}, {J. W.} and Jones, {R. E.} and Yamaguchi, {D. M.} and Yu, {K. M.} and W. Walukiewicz and Li, {S. X.} and Haller, {E. E.} and H. Lu and Schaff, {W. J.}",

year = "2007",

month = jun,

doi = "10.1002/pssb.200674762",

language = "English",

volume = "244",

pages = "1820--1824",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley & Sons",

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}

TY - JOUR

T1 - p-Type InN and In-rich InGaN

AU - Ager III, J. W.

AU - Jones, R. E.

AU - Yamaguchi, D. M.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Li, S. X.

AU - Haller, E. E.

AU - Lu, H.

AU - Schaff, W. J.

PY - 2007/6

Y1 - 2007/6

N2 - Capacitance-voltage (CV) measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p-type activity beneath a surface inversion layer in Mg-doped InN and In-rich InGaN. Analysis of CV data using the Poisson equation allows net charge as a function of depth to be determined. In undoped InN, good agreement of the net donor concentration below the surface accumulation layer with bulk Hall effect data is obtained. In Mg-doped InN and InGaN, the CV data are shown to be consistent with the presence of a net acceptor concentration NA-ND near 1019 cm-3 below a surface inversion laver. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - Capacitance-voltage (CV) measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p-type activity beneath a surface inversion layer in Mg-doped InN and In-rich InGaN. Analysis of CV data using the Poisson equation allows net charge as a function of depth to be determined. In undoped InN, good agreement of the net donor concentration below the surface accumulation layer with bulk Hall effect data is obtained. In Mg-doped InN and InGaN, the CV data are shown to be consistent with the presence of a net acceptor concentration NA-ND near 1019 cm-3 below a surface inversion laver. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34250356464&origin=recordpage

U2 - 10.1002/pssb.200674762

DO - 10.1002/pssb.200674762

M3 - RGC 21 - Publication in refereed journal

SN - 0370-1972

VL - 244

SP - 1820

EP - 1824

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 6

ER -

p-Type InN and In-rich InGaN

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