P-type InGaN across entire composition range

K. Wang; T. Katsuki; J. Sakaguchi; T. Araki; Y. Nanishi; K. M. Yu; M. A. Mayer; E. Alarcon-Llado; J. W. Ager III; W. Walukiewicz

doi:10.1109/ICSICT.2012.6467800

P-type InGaN across entire composition range

K. Wang^*
, T. Katsuki
, J. Sakaguchi
, T. Araki
, Y. Nanishi
, K. M. Yu
, M. A. Mayer
, E. Alarcon-Llado
, J. W. Ager III
, W. Walukiewicz

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range. © 2012 IEEE.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467800
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Place	China
City	Xi'an
Period	29/10/12 → 1/11/12

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Wang, K., Katsuki, T., Sakaguchi, J., Araki, T., Nanishi, Y., Yu, K. M., Mayer, M. A., Alarcon-Llado, E., Ager III, J. W., & Walukiewicz, W. (2012). P-type InGaN across entire composition range. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467800 https://doi.org/10.1109/ICSICT.2012.6467800

@inproceedings{502802523e0240e48c77a0a6ff3e97d5,

title = "P-type InGaN across entire composition range",

abstract = "We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range. {\textcopyright} 2012 IEEE.",

author = "K. Wang and T. Katsuki and J. Sakaguchi and T. Araki and Y. Nanishi and Yu, \{K. M.\} and Mayer, \{M. A.\} and E. Alarcon-Llado and \{Ager III\}, \{J. W.\} and W. Walukiewicz",

year = "2012",

doi = "10.1109/ICSICT.2012.6467800",

language = "English",

isbn = "9781467324724",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Wang, K, Katsuki, T, Sakaguchi, J, Araki, T, Nanishi, Y, Yu, KM, Mayer, MA, Alarcon-Llado, E, Ager III, JW & Walukiewicz, W 2012, P-type InGaN across entire composition range. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467800, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467800

P-type InGaN across entire composition range. / Wang, K.; Katsuki, T.; Sakaguchi, J. et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467800.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - P-type InGaN across entire composition range

AU - Wang, K.

AU - Katsuki, T.

AU - Sakaguchi, J.

AU - Araki, T.

AU - Nanishi, Y.

AU - Yu, K. M.

AU - Mayer, M. A.

AU - Alarcon-Llado, E.

AU - Ager III, J. W.

AU - Walukiewicz, W.

PY - 2012

Y1 - 2012

N2 - We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range. © 2012 IEEE.

AB - We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range. © 2012 IEEE.

UR - https://www.scopus.com/pages/publications/84874916565

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84874916565&origin=recordpage

U2 - 10.1109/ICSICT.2012.6467800

DO - 10.1109/ICSICT.2012.6467800

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781467324724

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

P-type InGaN across entire composition range

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