P -type conduction in beryllium-implanted hexagonal boron nitride films

B. He; W. J. Zhang; Z. Q. Yao; Y. M. Chong; Y. Yang; Q. Ye; X. J. Pan; J. A. Zapien; I. Bello; S. T. Lee; I. Gerhards; H. Zutz; H. Hofsäss

doi:10.1063/1.3276065

P -type conduction in beryllium-implanted hexagonal boron nitride films

B. He, W. J. Zhang, Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, J. A. Zapien, I. Bello, S. T. Lee, I. Gerhards, H. Zutz, H. Hofsäss

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

44 Citations (Scopus)

Abstract

p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3× 10¹⁹ cm^-3 and mobility of 27 cm² /V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings. © 2009 American Institute of Physics.

Original language	English
Article number	252106
Journal	Applied Physics Letters
Volume	95
Issue number	25
DOIs	https://doi.org/10.1063/1.3276065
Publication status	Published - 2009

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title = "P -type conduction in beryllium-implanted hexagonal boron nitride films",

abstract = "p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3× 1019 cm-3 and mobility of 27 cm2 /V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings. {\textcopyright} 2009 American Institute of Physics.",

author = "B. He and Zhang, {W. J.} and Yao, {Z. Q.} and Chong, {Y. M.} and Y. Yang and Q. Ye and Pan, {X. J.} and Zapien, {J. A.} and I. Bello and Lee, {S. T.} and I. Gerhards and H. Zutz and H. Hofs{\"a}ss",

year = "2009",

doi = "10.1063/1.3276065",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

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TY - JOUR

T1 - P -type conduction in beryllium-implanted hexagonal boron nitride films

AU - He, B.

AU - Zhang, W. J.

AU - Yao, Z. Q.

AU - Chong, Y. M.

AU - Yang, Y.

AU - Ye, Q.

AU - Pan, X. J.

AU - Zapien, J. A.

AU - Bello, I.

AU - Lee, S. T.

AU - Gerhards, I.

AU - Zutz, H.

AU - Hofsäss, H.

PY - 2009

Y1 - 2009

N2 - p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3× 1019 cm-3 and mobility of 27 cm2 /V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings. © 2009 American Institute of Physics.

AB - p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3× 1019 cm-3 and mobility of 27 cm2 /V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings. © 2009 American Institute of Physics.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-73449118905&origin=recordpage

U2 - 10.1063/1.3276065

DO - 10.1063/1.3276065

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252106

ER -

P -type conduction in beryllium-implanted hexagonal boron nitride films

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