Oxygen induced band-gap reduction in ZnOxSe1-x alloys

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • W. Shan
  • W. Walukiewicz
  • J. W. Ager III
  • J. Wu
  • E. E. Haller
  • Y. Nabetani

Detail(s)

Original languageEnglish
Pages (from-to)603-606
Journal / PublicationPhysica Status Solidi (B) Basic Research
Volume241
Issue number3
Publication statusPublished - Mar 2004
Externally publishedYes

Abstract

The effect of alloying a small amount of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in MBE-grown ZnOxSe1-x epitaxial films (0 ≤ x ≤, 0.0135) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by the O incorporation. Both effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction band edge. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Citation Format(s)

Oxygen induced band-gap reduction in ZnOxSe1-x alloys. / Shan, W.; Walukiewicz, W.; Ager III, J. W. et al.
In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 3, 03.2004, p. 603-606.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review