Abstract
We report the effect of O concentration in Cldoped ZnTeO on the photovoltaic (PV) properties of intermediate band solar cells (IBSCs) with a n-ZnS/ZnTe/Cl-doped ZnTeO/ ZnTe/p-ZnTe structure. With increasing O concentration in ZnTeO, an open circuit voltage does not change largely but a short circuit current density decreases significantly. On the other hands, the photocurrent induced by two-step photon absorption (TSPA) through the IB increases with the increase of O concentration, probably due to the increased density of states in IB.
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) |
| Publisher | IEEE |
| Pages | 1793-1796 |
| ISBN (Print) | 9781728104942 |
| DOIs | |
| Publication status | Published - Jun 2019 |
| Event | 46th IEEE Photovoltaic Specialists Conference (PVSC 2019) - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | 46th IEEE Photovoltaic Specialists Conference (PVSC 2019) |
|---|---|
| Place | United States |
| City | Chicago |
| Period | 16/06/19 → 21/06/19 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- Highly mismatched alloy
- intermediate band solar cell (IBSC)
- molecular beam epitaxy (MBE)
- ZnTeO
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