Oxide-assisted growth of semiconducting nanowires

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)635-640
Journal / PublicationAdvanced Materials
Volume15
Issue number7-8
Publication statusPublished - 17 Apr 2003

Abstract

In this contribution, we outline oxide-assisted growth (OAG) (distinct from the conventional metal-catalytic vapor-liquid-solid (VLS) process) for the growth of nanostructured materials. This synthesis technique, in which oxides instead of metals play an important role in inducing the nucleation and growth of nanowires, is capable of producing large quantities of high-purity silicon nanowires with a preferential growth direction, uniform size, and long length, without the need for a metal catalyst. The OAG 1D nanomaterials synthesis is complementary to, and coexistent with, the conventional metal-catalyst VLS approach, and can be utilized to produce nanowires from a host of materials other than Si including Ge nanowires, carbon nanowires, silicon and SnO2 nanoribbons, and Group III-V and II-VI compound semiconductor nanowires.

Citation Format(s)

Oxide-assisted growth of semiconducting nanowires. / Zhang, Rui-Qin; Lifshitz, Yeshayahu; Lee, Shuit-Tong.
In: Advanced Materials, Vol. 15, No. 7-8, 17.04.2003, p. 635-640.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review