Oxide-assisted growth and characterization of Ge/SiOx nanocables

Xiang-Min Meng; Jun-Qing Hu; Yang Jiang; Chun-Sing Lee; Shuit-Tong Lee

doi:10.1063/1.1609653

Oxide-assisted growth and characterization of Ge/SiOx nanocables

Xiang-Min Meng
, Jun-Qing Hu
, Yang Jiang
, Chun-Sing Lee
, Shuit-Tong Lee^*

^*Corresponding author for this work

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

47 Citations (Scopus)

Abstract

The preparation of germanium/SiO_x nanocables was discussed. The simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5% H₂ as the carrier gases was used for the preparation. It was found that the Ge/SiO_x nanocables had diameters in the range of 60-150 nm and lengths of several tens of micrometers.

Original language	English
Pages (from-to)	2241-2243
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1609653
Publication status	Published - 15 Sept 2003

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title = "Oxide-assisted growth and characterization of Ge/SiOx nanocables",

abstract = "The preparation of germanium/SiOx nanocables was discussed. The simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5\% H2 as the carrier gases was used for the preparation. It was found that the Ge/SiOx nanocables had diameters in the range of 60-150 nm and lengths of several tens of micrometers.",

author = "Xiang-Min Meng and Jun-Qing Hu and Yang Jiang and Chun-Sing Lee and Shuit-Tong Lee",

year = "2003",

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T1 - Oxide-assisted growth and characterization of Ge/SiOx nanocables

AU - Meng, Xiang-Min

AU - Hu, Jun-Qing

AU - Jiang, Yang

AU - Lee, Chun-Sing

AU - Lee, Shuit-Tong

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The preparation of germanium/SiOx nanocables was discussed. The simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5% H2 as the carrier gases was used for the preparation. It was found that the Ge/SiOx nanocables had diameters in the range of 60-150 nm and lengths of several tens of micrometers.

AB - The preparation of germanium/SiOx nanocables was discussed. The simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5% H2 as the carrier gases was used for the preparation. It was found that the Ge/SiOx nanocables had diameters in the range of 60-150 nm and lengths of several tens of micrometers.

UR - https://www.scopus.com/pages/publications/0142121583

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0142121583&origin=recordpage

U2 - 10.1063/1.1609653

DO - 10.1063/1.1609653

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 83

SP - 2241

EP - 2243

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Oxide-assisted growth and characterization of Ge/SiOx nanocables

Abstract

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