Oxidation suppression in ytterbium silicidation by TiTiN bicapping layer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

12 Scopus Citations
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Author(s)

  • Yu-Long Jiang
  • Qi Xie
  • Christophe Detavernier
  • R. L. Van Meirhaeghe
  • Guo-Ping Ru
  • Xin-Ping Qu
  • Bing-Zong Li
  • Anping Huang

Detail(s)

Original languageEnglish
Pages (from-to)285-289
Journal / PublicationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume25
Issue number2
Publication statusPublished - 2007

Abstract

Ytterbium (Yb) silicide is a promising contact material due to its low contact resistance and small Schottky barrier height in contact with n -type Si. However, as one of the rare earth metals, Yb is easily oxidized during physical vapor deposition and rapid thermal annealing. In this article, a bilayered TiTiN cap is proposed and demonstrated to effectively suppress oxidation during Yb silicidation. The authors' results reveal that diffusion of Ti atoms in the TiN layer plays a key role in oxidation suppression. © 2007 American Vacuum Society.

Citation Format(s)

Oxidation suppression in ytterbium silicidation by TiTiN bicapping layer. / Jiang, Yu-Long; Xie, Qi; Detavernier, Christophe et al.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 25, No. 2, 2007, p. 285-289.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review