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Oxidation suppression in ytterbium silicidation by TiTiN bicapping layer

Yu-Long Jiang, Qi Xie, Christophe Detavernier, R. L. Van Meirhaeghe, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li, Anping Huang, Paul K. Chu

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    Ytterbium (Yb) silicide is a promising contact material due to its low contact resistance and small Schottky barrier height in contact with n -type Si. However, as one of the rare earth metals, Yb is easily oxidized during physical vapor deposition and rapid thermal annealing. In this article, a bilayered TiTiN cap is proposed and demonstrated to effectively suppress oxidation during Yb silicidation. The authors' results reveal that diffusion of Ti atoms in the TiN layer plays a key role in oxidation suppression. © 2007 American Vacuum Society.
    Original languageEnglish
    Pages (from-to)285-289
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume25
    Issue number2
    DOIs
    Publication statusPublished - 2007

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