Abstract
Ytterbium (Yb) silicide is a promising contact material due to its low contact resistance and small Schottky barrier height in contact with n -type Si. However, as one of the rare earth metals, Yb is easily oxidized during physical vapor deposition and rapid thermal annealing. In this article, a bilayered TiTiN cap is proposed and demonstrated to effectively suppress oxidation during Yb silicidation. The authors' results reveal that diffusion of Ti atoms in the TiN layer plays a key role in oxidation suppression. © 2007 American Vacuum Society.
| Original language | English |
|---|---|
| Pages (from-to) | 285-289 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 |
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