Oxidation of Cu and Cu3Ge thin films

H. K. Liou; J. S. Huang; K. N. Tu

doi:10.1063/1.359238

Oxidation of Cu and Cu₃Ge thin films

H. K. Liou, J. S. Huang, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

35 Citations (Scopus)

Abstract

We have studied the oxidation kinetics of Cu and Cu₃Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu ₃Ge oxidize only above 450°C. The excellent oxidation resistance of Cu₃Ge is due to the thin GeO₂ layer which protects Cu₃Ge from oxidation below 450°C. Above 510°C, GeO ₂ evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu ₃Ge to have a better adhesion to SiO₂ than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.

Original language	English
Pages (from-to)	5443-5445
Journal	Journal of Applied Physics
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.359238
Publication status	Published - 1995
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{ff82127643e24886a588b378ceaec80b,

title = "Oxidation of Cu and Cu3Ge thin films",

abstract = "We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. {\textcopyright} 1995 American Institute of Physics.",

author = "Liou, {H. K.} and Huang, {J. S.} and Tu, {K. N.}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1995",

doi = "10.1063/1.359238",

language = "English",

volume = "77",

pages = "5443--5445",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Oxidation of Cu and Cu3Ge thin films

AU - Liou, H. K.

AU - Huang, J. S.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1995

Y1 - 1995

N2 - We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.

AB - We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0043063790&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0043063790&origin=recordpage

U2 - 10.1063/1.359238

DO - 10.1063/1.359238

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 77

SP - 5443

EP - 5445

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -