Oxidation of Cu and Cu3Ge thin films

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)5443-5445
Journal / PublicationJournal of Applied Physics
Volume77
Issue number10
Publication statusPublished - 1995
Externally publishedYes

Abstract

We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.

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Citation Format(s)

Oxidation of Cu and Cu3Ge thin films. / Liou, H. K.; Huang, J. S.; Tu, K. N.
In: Journal of Applied Physics, Vol. 77, No. 10, 1995, p. 5443-5445.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review